? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25c to 150c 300 v v dgr t j = 25c to 150c, r gs = 1m ? 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25c 69 a i dm t c = 25c, pulse width limited by t jm 200 a i a t c = 25c 69 a e as t c = 25c 1.5 j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25c 500 w t j -55 to +150 c t jm +150 c t stg -55 to +150 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated fast intrinsic diode polar tm hiperfet tm power mosfet IXFH69N30P ixft69n30p ds99220f(10/09) v dss = 300v i d25 = 69a r ds(on) 49m ? ? ? ? ? t rr 200ns features z international standard packages z fast intrinsic diode z avalanche rated z low r ds(on) and q g z low package inductance advantages z high power density z easy to mount z space savings applications z dc-dc coverters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac and dc motor drives z uninterrupted power supplies z high speed power switching applications symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250a 300 v v gs(th) v ds = v gs , i d = 4ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 49 m ? g = gate d = drain s = source tab = drain to-247 (ixfh) to-268 (ixft) g s d (tab) s g d (tab) d
ixys reserves the right to change limits, test conditions, and dimensions. IXFH69N30P ixft69n30p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 30 48 s c iss 4960 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 760 pf c rss 190 pf t d(on) 25 ns t r 25 ns t d(off) 75 ns t f 27 ns q g(on) 156 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 34.5a 32 nc q gd 79 nc r thjc 0.25 c/w r thcs to-247 0.21 c/w note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 69a r g = 4 ? (external) source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 69 a i sm repetitive, pulse width limited by t jm 270 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 100 200 ns q rm 500 nc i f = 25a, -di/dt = 100a/ s, v r = 100v, v gs = 0v e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixft) outline terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2009 ixys corporation, all rights reserved IXFH69N30P ixft69n30p fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 v ds - volts i d - amperes v gs = 10v 8v 7 v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 9v 7 v 6 v 5 v 8 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 0123456789 v ds - volts i d - amperes v gs = 10v 8v 5 v 7v 6v fig. 4. r ds(on) normalized to i d = 34.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 69a i d = 34.5a fig. 5. r ds(on) normalized to i d = 34.5a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 140 160 180 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFH69N30P ixft69n30p fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 102030405060708090 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 150v i d = 34.5a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1,000.0 1 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms
? 2009 ixys corporation, all rights reserved ixys ref: t_69n30p(7s)10-16-09-a IXFH69N30P ixft69n30p fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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